| PART |
Description |
Maker |
| 1SMA4743 1SMA4760 1SMA4761 1SMA110Z 1SMA4741 1SMA4 |
SURFACE MOUNT SILICON ZENDER DIODE
|
Silicon Standard Corp.
|
| 5SLX12M6500 |
Fast-Diode Die
|
The ABB Group
|
| DWEP9-12S |
12 A, SILICON, RECTIFIER DIODE DIE-1
|
IXYS, Corp.
|
| S6301 |
SiC Schottky Barrier Diode Bare Die
|
Rohm
|
| S6302 |
SiC Schottky Barrier Diode Bare Die
|
Rohm
|
| RD25050-W-AU RD25100-W-AU RD251000-W-AU RD25200-W- |
50 V, 25 A, rectifier automotive die
100 V, 25 A, rectifier automotive die
1000 V, 25 A, rectifier automotive die
200 V, 25 A, rectifier automotive die
|
TRANSYS Electronics Limited
|
| K4H510838D-UC/LA2 K4H510838D-UC/LB0 K4H510838D-UC/ |
512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) 12Mb芯片DDR SDRAM的规格铅66 TSOP-II免费（符合RoHS
DIODE ZENER SINGLE 500mW 8.8Vz 20mA-Izt 0.025 0.1uA-Ir 7 SOD-123 3K/REEL 12Mb芯片与DDR SDRAM的规格铅66 TSOP-II免费（符合RoHS
DIODE ZENER SINGLE 200mW 43Vz 0.05mA-Izt 0.05 0.05uA-Ir 32.6 SOD-323 3K/REEL 12Mb芯片与DDR SDRAM的规格铅66 TSOP-II免费（符合RoHS
Dual Wide Bandwidth High Output Drive Single Supply Op Amp With Shutdown 10-MSOP-PowerPAD 0 to 70 12Mb芯片与DDR SDRAM的规格铅66 TSOP-II免费（符合RoHS
512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) 12Mb芯片与DDR SDRAM的规格铅66 TSOP-II免费（符合RoHS
DIODE ZENER SINGLE 150mW 39Vz 0.05mA-Izt 0.05 0.05uA-Ir 29.6 SOD-523 3K/REEL
DIODE ZENER SINGLE 500mW 43Vz 0.05mA-Izt 0.05 0.05uA-Ir 32.6 SOD-123 3K/REEL
DIODE ZENER SINGLE 150mW 43Vz 0.05mA-Izt 0.05 0.05uA-Ir 32.6 SOD-523 3K/REEL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| SD275SA45B |
SILICON SCHOTTKY RECTIFIER DIE Very Low Forward Voltage Drop (150 ∑C TJ Operation) 120 A, SILICON, RECTIFIER DIODE
|
Sensitron Semiconductor
|
| SD275SCU100B |
SILICON SCHOTTKY RECTIFIER DIE Ultra Low Reverse Leakage 200∑C Operating Temperature 120 A, SILICON, RECTIFIER DIODE
|
Sensitron Semiconductor
|
